high voltage darlington transistors npn silicon maximum ratings rating symbol bc372 bc373 unit collectoremitter voltage v ces 100 80 vdc collectorbase voltage v cbo 100 80 vdc emitterbase voltage v ebo 12 vdc collector current e continuous i c 1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (1) (i c = 100 adc, i b = 0) bc372 bc373 v (br)ces 100 80 e e e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) bc372 bc373 v (br)cbo 100 80 e e e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 12 e e vdc collector cutoff current (v cb = 80 vdc, i e = 0) bc372 (v cb = 60 vdc, i e = 0) bc373 i cbo e e e e 100 100 nadc emitter cutoff current (v eb = 10 v, i c = 0) i ebo e e 100 nadc 1. pulse test: pulse width = 300 s, duty cycle 2.0%. on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 2 1 publication order number: bc272/d bc372 bc373 case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 base 2 emitter 1
bc372 bc373 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (1) dc current gain (i c = 250 madc, v ce = 5.0 vdc) (i c = 100 madc, v ce = 5.0 vdc) h fe 8.0 10 e e e 160 k collectoremitter saturation voltage (i c = 250 madc, i b = 0.25 madc) v ce(sat) e 1.0 1.1 vdc baseemitter saturation voltage (i c = 250 madc, i b = 0.25 madc) v be(sat) e 1.4 2.0 vdc dynamic characteristics currentgain bandwidth product (i c = 100 madc, v ce = 5.0 vdc, f = 100 mhz) f t 100 200 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob e 10 25 pf noise figure (i c = 1.0 madc, v ce = 5.0 vdc, r g = 100 k ohm, f = 1.0 khz) nf e 2.0 e db 1. pulse test: pulse width = 300 s, duty cycle 2.0%. figure 1. i c , collector current (ma) figure 1. dc current gain 100 k 1 k 1 h fe , dc current gain i c , collector current (ma) figure 2. asaturationo and aono voltages voltage (v) 1.6 1.2 1 0 5 100 10 500 10 100 1000 10 k t a = 125 c 25 c -55 c v ce = 5 v 1.4 0.8 0.6 v be(sat) @ i c /i b = 100 0.2 v be(on) @ v ce = 5 v v ce(sat) @ i c /i b = 100 0.4 figure 3. currentgain e bandwidth product i c , collector current (ma) 1000 100 10 v ce = 5 v t j = 25 c f, current-gain bandwidth product (mhz) t 0.6 10 1 600 100 c, capacitance (pf) figure 4. capacitances v r , reverse voltage (volts) 10 0.1 100 c ib 100 1 10 c ob
bc372 bc373 http://onsemi.com 3 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
bc372 bc373 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc372/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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